Journals
Advanced Photonics
Photonics Insights
Advanced Photonics Nexus
Photonics Research
Advanced Imaging
View All Journals
Chinese Optics Letters
High Power Laser Science and Engineering
Articles
Optics
Physics
Geography
View All Subjects
Conferences
CIOP
HPLSE
AP
View All Events
News
About CLP
Search by keywords or author
Login
Registration
Login in
Registration
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
laser
the
2D Materials
Transformation optics
Quantum Photonics
Home
About
Early Posting
Current Issue
Issue in Progress
Special Issues
All Issues
Special Events
Journals >
>
Topics >
Special Issue on Metal Halide Perovskite and Their Applications
Contents
Special Issue on Metal Halide Perovskite and Their Applications
|
5 Article(s)
Stable and high performance all-inorganic perovskite light-emitting diodes with anti-solvent treatment
|
Editors' Pick
Sajid Hussain, Ahmad Raza, Fawad Saeed, Abida Perveen, Yan Sikhai, Nasrud Din, Elias E. Elemike, Qianqian Huang, Alagesan Subramanian, Qasim Khan, and Wei Lei
Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes (Pe-LEDs) can be enhanced by improving the perovskite film via solvent engineering. A dual solvent post-treatment strategy was applied to the perovskite film, which provides a synchronous effect of passivating surface imperfections and reduces exciton quenching, as evidenced by improved surface morphology and photoluminance. Thus, the optimized Pe-LEDs reach 17,866 cd·m-2 maximum brightness, 45.8 cd·A-1 current efficiency, 8.3% external quantum efficiency, and relatively low turn-on voltage of 2.0 V. Herein, we present a simple technique for the fabrication of stable and efficient Pe-LEDs.
Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes (Pe-LEDs) can be enhanced by improving the perovskite film via solvent engineering. A dual solvent post-treatment strategy was applied to the perovskite film, which provides a synchronous effect of passivating surface imperfections and reduces exciton quenching, as evidenced by improved surface morphology and photoluminance. Thus, the optimized Pe-LEDs reach 17,866 cd·m-2 maximum brightness, 45.8 cd·A-1 current efficiency, 8.3% external quantum efficiency, and relatively low turn-on voltage of 2.0 V. Herein, we present a simple technique for the fabrication of stable and efficient Pe-LEDs.
showLess
Chinese Optics Letters
Publication Date: Mar. 10, 2021
Vol. 19, Issue 3, 030005 (2021)
Get PDF
View fulltext
Optoelectronic and elastic properties of metal halides double perovskites Cs
2
InBiX
6
(X = F, Cl, Br, I)
Muhammad Saeed, Izaz Ul Haq, Shafiq Ur Rehman, Akbar Ali, Wajid Ali Shah, Zahid Ali, Qasim Khan, and Imad Khan
Structural geometry, electronic band gaps, density of states, optical and mechanical properties of double perovskite halides Cs2InBiX6 (X = F, Cl, Br, I) are investigated using the density functional theory. These compounds possess genuine perovskite stoichiometry, evaluated using various geometry-based indices like tolerance factor, octahedral factor, and formation energy. The fundamental electronic band gaps are direct and valued in the range 0.80–2.79 eV. These compounds have narrow band gaps (except Cs2InBiF6) due to strong orbital coupling of the cations. The valence band maximum and conduction band minimum are confirmed to be essentially of In 5s and Bi 6p characters, respectively. The splitting of Bi 6p bands due to strong spin-orbit coupling causes reduction in the band gaps. These compounds have large dispersion in their bands and very low carrier effective masses. The substitution of halogen atoms has great influence on the optical properties. The mechanical properties reveal that Cs2InBiX6 (X = F, Cl, Br, I) satisfy the stability criteria in cubic structures.
Structural geometry, electronic band gaps, density of states, optical and mechanical properties of double perovskite halides Cs2InBiX6 (X = F, Cl, Br, I) are investigated using the density functional theory. These compounds possess genuine perovskite stoichiometry, evaluated using various geometry-based indices like tolerance factor, octahedral factor, and formation energy. The fundamental electronic band gaps are direct and valued in the range 0.80–2.79 eV. These compounds have narrow band gaps (except Cs2InBiF6) due to strong orbital coupling of the cations. The valence band maximum and conduction band minimum are confirmed to be essentially of In 5s and Bi 6p characters, respectively. The splitting of Bi 6p bands due to strong spin-orbit coupling causes reduction in the band gaps. These compounds have large dispersion in their bands and very low carrier effective masses. The substitution of halogen atoms has great influence on the optical properties. The mechanical properties reveal that Cs2InBiX6 (X = F, Cl, Br, I) satisfy the stability criteria in cubic structures.
showLess
Chinese Optics Letters
Publication Date: Mar. 10, 2021
Vol. 19, Issue 3, 030004 (2021)
Get PDF
View fulltext
High-brightness red-emitting double-perovskite phosphor Sr
2
LaTaO
6
:Eu
3+
with high color purity and thermal stability [Invited]
|
On the Cover
Zongjie Zhang, Wei Li, Nan Ma, and Xiaoyong Huang
Bright Eu3+-activated double-perovskite Sr2LaTaO6 red-emitting phosphors were successfully synthesized by a high-temperature solid-state method. Under near-ultraviolet excitation at 394 nm, optimal Sr2LaTaO6:0.2Eu3+ phosphors emitted high-brightness red light around 613 nm with the International Commission on Illumination chromaticity coordinates (0.650, 0.349). Notably, the color purity can reach 92%. Impressively, the favorable thermal stability of the Sr2LaTaO6:0.2Eu3+ phosphors was characterized by temperature-dependent emission spectra at different temperatures from 303 to 463 K, and the emission intensity at 423 K remained 73% of its value at 303 K. All of the results suggested that the as-prepared Sr2LaTaO6:0.2Eu3+ phosphors can be used in near-ultraviolet-excitable white light-emitting diodes as a red-emitting color converter.
Bright Eu3+-activated double-perovskite Sr2LaTaO6 red-emitting phosphors were successfully synthesized by a high-temperature solid-state method. Under near-ultraviolet excitation at 394 nm, optimal Sr2LaTaO6:0.2Eu3+ phosphors emitted high-brightness red light around 613 nm with the International Commission on Illumination chromaticity coordinates (0.650, 0.349). Notably, the color purity can reach 92%. Impressively, the favorable thermal stability of the Sr2LaTaO6:0.2Eu3+ phosphors was characterized by temperature-dependent emission spectra at different temperatures from 303 to 463 K, and the emission intensity at 423 K remained 73% of its value at 303 K. All of the results suggested that the as-prepared Sr2LaTaO6:0.2Eu3+ phosphors can be used in near-ultraviolet-excitable white light-emitting diodes as a red-emitting color converter.
showLess
Chinese Optics Letters
Publication Date: Mar. 10, 2021
Vol. 19, Issue 3, 030003 (2021)
Get PDF
View fulltext
Electron-beam-induced degradation of halide-perovskite-related semiconductor nanomaterials
Zhiya Dang, Yuqing Luo, Xue-Sen Wang, Muhammad Imran, and Pingqi Gao
The instability of lead halide perovskites in various application-related conditions is a key challenge to be resolved. We investigated the formation of metal nanoparticles during transmission electron microscopy (TEM) imaging of perovskite-related metal halide compounds. The metal nanoparticle formation on these materials originates from stimulated desorption of halogen under electron beams and subsequent aggregation of metal atoms. Based on shared mechanisms, the TEM-based degradation test can help to evaluate the material stability against light irradiation.
The instability of lead halide perovskites in various application-related conditions is a key challenge to be resolved. We investigated the formation of metal nanoparticles during transmission electron microscopy (TEM) imaging of perovskite-related metal halide compounds. The metal nanoparticle formation on these materials originates from stimulated desorption of halogen under electron beams and subsequent aggregation of metal atoms. Based on shared mechanisms, the TEM-based degradation test can help to evaluate the material stability against light irradiation.
showLess
Chinese Optics Letters
Publication Date: Mar. 10, 2021
Vol. 19, Issue 3, 030002 (2021)
Get PDF
View fulltext
Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited]
Le Jiang, Xi Luo, Zhongming Luo, Dingjian Zhou, Baoxing Liu, Jincheng Huang, Jianfeng Zhang, Xulin Zhang, Ping Xu, and Guijun Li
Halide perovskites have attracted great attention due to their high color purity, high luminance yield, low non-radiative recombination rate, and solution processability. Although the external quantum efficiency of perovskite light-emitting diodes (PeLEDs) is comparable with that of the organic light-emitting diodes (OLEDs) and quantum-dots light-emitting diodes (QLEDs), the brightness is still low compared with the traditional OLEDs and QLEDs. Herein, we demonstrate high brightness and high-efficiency CsPbBr3-based PeLEDs using interface and bulk controlled nanocrystal growth of the perovskite emission layer. The interface engineering by ethanolamine and bulk engineering by polyethylene glycol led to highly crystallized and cubic-shaped perovskite nanocrystals with smooth and compact morphology. As a result, PeLEDs with a high brightness of 64756 cd/m2 and an external quantum efficiency of 13.4% have been achieved.
Halide perovskites have attracted great attention due to their high color purity, high luminance yield, low non-radiative recombination rate, and solution processability. Although the external quantum efficiency of perovskite light-emitting diodes (PeLEDs) is comparable with that of the organic light-emitting diodes (OLEDs) and quantum-dots light-emitting diodes (QLEDs), the brightness is still low compared with the traditional OLEDs and QLEDs. Herein, we demonstrate high brightness and high-efficiency CsPbBr3-based PeLEDs using interface and bulk controlled nanocrystal growth of the perovskite emission layer. The interface engineering by ethanolamine and bulk engineering by polyethylene glycol led to highly crystallized and cubic-shaped perovskite nanocrystals with smooth and compact morphology. As a result, PeLEDs with a high brightness of 64756 cd/m2 and an external quantum efficiency of 13.4% have been achieved.
showLess
Chinese Optics Letters
Publication Date: Mar. 10, 2021
Vol. 19, Issue 3, 030001 (2021)
Get PDF
View fulltext
Topics
3d holographic display
3d imaging and display
Applications
Atmospheric and oceanic optics
Atmospheric, Oceanic, Space, and Environmental Optics
Atomic and Molecular Optics
Atomic and Molecular Physics
Auto-stereography and virtual reality
Biomedical Optics
Biophotonics
Coatings for solar cell
Coherence and statistical optics
COHERENCE OPTICS AND STATISTICAL OPTICS
Computer generated hologram
Computer-generated holography
Deposition and process control
Design and analysis
Detectors
Diffraction and Gratings
Diffraction, Gratings, and Holography
Digital Holography
Duv/euv coatings
Editorial
Fiber Optics and Optical Communications
Fourier optics and optical signal processing
Fourier Optics and Signal Processing
General
Geometric Optics
Geometrical optics
Holographic reconstruction, display,and projection
Holography
Image processing
Image Processing and Machine Vision
Imaging Systems
Imaging Systems and Image Processing
Infrared and Terahertz Photonics
Instrumentation, measurement, and metrology
Instrumentation, Measurement, and Optical Sensing
Integral imaging
Integrate optics
Integrated Optics
Lasers and Laser Optics
Lasers, Optical Amplifiers, and Laser Optics
Letters
Light-matter Interaction
Machine Vision
Materials
Measurement
Medical and biological imaging
Medical optics and biotechnology
Metamaterials, plasmon polaritons, and waveguides in terahertz region
Microscopy
Microwave Photonics
Multiphoton processes
Nanophotonics
Nanophotonics, Metamaterials, and Plasmonics
Nolinear optics
Nonlinear Optics
optical computing
OPTICAL DATA STORAGE
Optical Design and Fabrication
optical design and fabrications
Optical devices
Optical divces
Optical Materials
Optical Sensing, Measurements, and Metrology
Optical trapping
Optics at Surfaces
Optics in Computing
Optics in Computing and Optical Data Storage
Optics in Interdisciplinary Research
Optoelectronics
Other Areas of Optics
Physical Optics
Plasmonics and Metamaterials
Quantum optics
Quantum Optics and Quantum Information
remote sensing
Remote Sensing and Sensors
Research Articles
Reviews
Scattering
Solar Energy and Photovoltaics
Sources and mechanisms of terahertz radiation
Special Issue on 20th Anniversary of Wuhan National Laboratory for Optoelectronics (WNLO)
Special Issue on 70th anniversary of National University of Defense Technology
Special Issue on Lithium Niobate Based Photonic Devices
Special Issue on Lithium Noibate Based Photonic Devices
Special Issue on Metal Halide Perovskite and Their Applications
Special Issue on OISE Major Jointly Established by Tianjin University and Nankai University
Special Issue on Optical Metasurfaces: Fundamentals and Applications
Special Issue on Spatiotemporal Optical Fields and Time-Varying Optical Materials
Special Issue on the 20th Anniversary of Wuhan National Laboratory for Optoelectronics (WNLO)
Spectroscopy
Spectroscopy, imaging, and sensing using terahertz radiation
Thin films
Thin Films and Optics at Surfaces
Ultrafast Optics
Ultrafast Optics and Attosecond/High-field Physics
Ultrafast Optics: fundamentals and applications
Underwater Wireless Optical Communication
vision and color
Vision, color, and visual
Vision, Color, and Visual Optics
Visual Optics and Displays
X-ray Optics